Infineon OptiMOS 5 N-Channel Power MOSFET, 87 A, 150 V Enhancement, 8-Pin PG-TDSON-8 BSC088N15LS5ATMA1

RS-stocknr.:: 349-395
Fabrikantnummer:: BSC088N15LS5ATMA1
Fabrikant:: Infineon

Infineon OptiMOS 5 N-Channel Power MOSFET, 87 A, 150 V Enhancement, 8-Pin PG-TDSON-8 BSC088N15LS5ATMA1

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RS-stocknr.:: 349-395
Fabrikantnummer:: BSC088N15LS5ATMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	87A
	Maximum Drain Source Voltage Vds	150V
	Series	OptiMOS 5
	Package Type	PG-TDSON-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	8.8mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	40nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	139W
	Forward Voltage Vf	1.20V
	Maximum Operating Temperature	150°C
	Standards/Approvals	DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 87A
	Maximum Drain Source Voltage Vds 150V
	Series OptiMOS 5
	Package Type PG-TDSON-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 8.8mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 40nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 139W
	Forward Voltage Vf 1.20V
	Maximum Operating Temperature 150°C
	Standards/Approvals DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS
	Automotive Standard No

Datasheet - BSC088N15LS5ATMA1

Land van herkomst:: CN

Infineon OptiMOS 5 Series Power MOSFET, 150V Maximum Drain-Source Voltage, 139W Maximum Power Dissipation - BSC088N15LS5ATMA1

This power MOSFET is a surface-mount N‑channel enhancement device designed for high-current switching and power conversion tasks. It operates across a wide temperature range and is suited to applications requiring efficient conduction at elevated voltages. The device includes gate protection and complies with recognised material and temperature endurance standards while meeting RoHS requirements.

Features and Benefits:

• 8.8mΩ RDS(on) reduces conduction losses and improves efficiency
• 87A continuous drain current supports high-current designs
• 1.20V forward voltage lowers on-state voltage drop
• 40 nC typical gate charge enables Rapid switching transitions
• 20V gate-source limit provides robust gate protection

Applications

• Suitable for high-power DC-DC converters in industrial equipment
• Used with motor drivers requiring sustained high current
• Ideal for switch‑mode power supplies in telecoms systems
• Can be used for battery management and power distribution
• Suitable for high-power low-loss switching in inverters

What thermal endurance does it offer under continuous operation?

It is rated to operate from -55°C up to 150°C, providing broad thermal headroom for demanding environments.

Which package and mounting style support Compact assemblies?

The PG‑TDSON‑8 package is intended for surface‑mount placement to enable space‑efficient board layouts.

What standards and material constraints apply to its manufacture?

The device meets DIN IEC 68‑1:55/175/56, IEC 61249‑2‑21 and is RoHS compliant.

How does the device behave in terms of switching performance?

With a typical gate charge of 40 nC and enhancement‑channel operation, it supports fast gate transitions for efficient switching.