Infineon OptiMOS 5 N-Channel Power MOSFET, 76 A, 150 V Enhancement, 8-Pin PG-TDSON-8 BSC105N15LS5ATMA1
- RS-stocknr.:
- 349-397
- Fabrikantnummer:
- BSC105N15LS5ATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 5 eenheden)*
€ 18,62
(excl. BTW)
€ 22,53
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 5.000 stuk(s) vanaf 15 september 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 3,724 | € 18,62 |
| 50 - 95 | € 3,54 | € 17,70 |
| 100 - 495 | € 3,274 | € 16,37 |
| 500 - 995 | € 3,016 | € 15,08 |
| 1000 + | € 2,908 | € 14,54 |
*prijsindicatie
- RS-stocknr.:
- 349-397
- Fabrikantnummer:
- BSC105N15LS5ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | Power MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 76A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | PG-TDSON-8 | |
| Series | OptiMOS 5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 10.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 125W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type Power MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 76A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type PG-TDSON-8 | ||
Series OptiMOS 5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 10.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 125W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Infineon OptiMOS 5 power MOSFET logic level 150 V family offers the same excellent performance of the OptiMOS 5 150 V products with the capability of operating with just 4.5 V of Vgs. Its features an improved thermal management and less system complexity.
Very low switching losses
Tailored to SR that provide 5 V
Highly efficient designs
Gerelateerde Links
- Infineon OptiMOS 5 Type N-Channel Power MOSFET 150 V Enhancement, 8-Pin PG-TDSON-8 BSC152N15LS5ATMA1
- Infineon OptiMOS-TM7 Type N-Channel MOSFET 40 V Enhancement, 8-Pin PG-TDSON-8-34 IAUCN04S7L014ATMA1
- Infineon OptiMOS 7 Type N-Channel MOSFET 80 V Enhancement, 8-Pin PG-TDSON-8-53 IAUCN08S7N013ATMA1
- Infineon OptiMOS 5 Type N-Channel Power MOSFET 150 V Enhancement, 8-Pin PG-TDSON-8 BSC088N15LS5ATMA1
- Infineon OptiMOS-TM7 Type N-Channel MOSFET 40 V Enhancement, 8-Pin PG-TDSON-8-61 IAUCN04S7L053DATMA1
- Infineon OptiMOS-TM7 Type N-Channel MOSFET 40 V Enhancement, 8-Pin PG-TDSON-8-33 IAUCN04S7L028ATMA1
- Infineon OptiMOS-TM7 Type N-Channel MOSFET 40 V Enhancement, 8-Pin PG-TDSON-8-34 IAUCN04S7N009ATMA1
- Infineon OptiMOS-TM7 Type N-Channel MOSFET 40 V Enhancement, 8-Pin PG-TDSON-8-34 IAUCN04S7N015ATMA1