Infineon IGLT65 Type N-Channel MOSFET, 15 A, 650 V Enhancement, 16-Pin PG-HDSOP-16 IGLT65R110D2ATMA1
- RS-stocknr.:
- 351-885
- Fabrikantnummer:
- IGLT65R110D2ATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 7,92
(excl. BTW)
€ 9,58
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 23 juni 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 3,96 | € 7,92 |
| 20 - 198 | € 3,57 | € 7,14 |
| 200 - 998 | € 3,29 | € 6,58 |
| 1000 - 1998 | € 3,05 | € 6,10 |
| 2000 + | € 2,735 | € 5,47 |
*prijsindicatie
- RS-stocknr.:
- 351-885
- Fabrikantnummer:
- IGLT65R110D2ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | IGLT65 | |
| Package Type | PG-HDSOP-16 | |
| Mount Type | Surface | |
| Pin Count | 16 | |
| Maximum Drain Source Resistance Rds | 0.14Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 55W | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Typical Gate Charge Qg @ Vgs | 2.4nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC for Industrial Applications | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series IGLT65 | ||
Package Type PG-HDSOP-16 | ||
Mount Type Surface | ||
Pin Count 16 | ||
Maximum Drain Source Resistance Rds 0.14Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 55W | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Typical Gate Charge Qg @ Vgs 2.4nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC for Industrial Applications | ||
Automotive Standard No | ||
- Land van herkomst:
- MY
The Infineon GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a top-side cooled TOLT package, it is designed for optimal power dissipation in various industrial applications.
650 V e-mode power transistor
Ultrafast switching
No reverse-recovery charge
Capable of reverse conduction
Low gate charge, low output charge
Superior commutation ruggedness
Low dynamic RDS(on)
High ESD robustness: 2 kV HBM - 1 kV CDM
Top-side cooled package
JEDEC qualified (JESD47, JESD22)
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