Infineon IGLT65 Type N-Channel MOSFET, 31 A, 650 V Enhancement, 16-Pin PG-HDSOP-16 IGLT65R055D2ATMA1
- RS-stocknr.:
- 351-886
- Fabrikantnummer:
- IGLT65R055D2ATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 7,62
(excl. BTW)
€ 9,22
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 12 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 7,62 |
| 10 - 99 | € 6,86 |
| 100 - 499 | € 6,32 |
| 500 - 999 | € 5,87 |
| 1000 + | € 5,26 |
*prijsindicatie
- RS-stocknr.:
- 351-886
- Fabrikantnummer:
- IGLT65R055D2ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 31A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PG-HDSOP-16 | |
| Series | IGLT65 | |
| Mount Type | Surface | |
| Pin Count | 16 | |
| Maximum Drain Source Resistance Rds | 0.066Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 4.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 102W | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC for Industrial Applications | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 31A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PG-HDSOP-16 | ||
Series IGLT65 | ||
Mount Type Surface | ||
Pin Count 16 | ||
Maximum Drain Source Resistance Rds 0.066Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 4.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 102W | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC for Industrial Applications | ||
Automotive Standard No | ||
- Land van herkomst:
- MY
The Infineon GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a top-side cooled TOLT package, it is designed for optimal power dissipation in various industrial applications.
650 V e-mode power transistor
Ultrafast switching
No reverse-recovery charge
Capable of reverse conduction
Low gate charge, low output charge
Superior commutation ruggedness
Low dynamic RDS(on)
High ESD robustness: 2 kV HBM - 1 kV CDM
Top-side cooled package
JEDEC qualified (JESD47, JESD22)
Gerelateerde Links
- Infineon IGLT65 GaN N-Channel MOSFET Transistor 650 V, 16-Pin PG-HDSOP-16 IGLT65R035D2ATMA1
- Infineon IGLT65 GaN N-Channel MOSFET Transistor 650 V, 16-Pin PG-HDSOP-16 IGLT65R045D2ATMA1
- Infineon IGLT65 GaN N-Channel MOSFET Transistor 650 V, 16-Pin PG-HDSOP-16 IGLT65R025D2AUMA1
- Infineon IGLT65 GaN N-Channel MOSFET Transistor 650 V, 16-Pin PG-HDSOP-16 IGLT65R110D2ATMA1
- Infineon IGT65 GaN N-Channel MOSFET Transistor 650 V, 8-Pin PG-HSOF-8 IGT65R055D2ATMA1
- Infineon IMLT65 SiC N-Channel MOSFET 650 V, 16-Pin PG-HDSOP-16 IMLT65R026M2HXTMA1
- Infineon IML SiC N-Channel MOSFET 650 V, 16-Pin PG-HDSOP-16 IMLT65R050M2HXTMA1
- Infineon IML SiC N-Channel MOSFET 650 V, 16-Pin PG-HDSOP-16 IMLT65R040M2HXTMA1