Infineon IMZC120 Type N-Channel MOSFET, 80 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-U07 IMZC120R022M2HXKSA1

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RS-stocknr.:
351-925
Fabrikantnummer:
IMZC120R022M2HXKSA1
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

1200V

Package Type

PG-TO-247-4-U07

Series

IMZC120

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

22mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

71nC

Maximum Power Dissipation Pd

329W

Forward Voltage Vf

5.5V

Maximum Gate Source Voltage Vgs

23 V

Maximum Operating Temperature

200°C

Standards/Approvals

JEDEC47/20/22

Width

16 mm

Length

23.5mm

Automotive Standard

No

The Infineon CoolSiC MOSFET discrete 1200 V, 22 mΩ G2 in a TO-247 4pin with high creepage package builds on the strengths of Generation 1 technology with significant improvement that provides an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.

Short circuit withstand time 2 μs

Benchmark gate threshold voltage 4.2 V

Robust against parasitic turn on

Very low switching losses

Tighter VGS(th) parameter distribution

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