Infineon IMZC120 Type N-Channel MOSFET, 27 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-U07 IMZC120R053M2HXKSA1
- RS-stocknr.:
- 351-931
- Fabrikantnummer:
- IMZC120R053M2HXKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 8,72
(excl. BTW)
€ 10,55
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 237 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 8,72 |
| 10 - 99 | € 7,86 |
| 100 - 499 | € 7,25 |
| 500 - 999 | € 6,72 |
| 1000 + | € 6,02 |
*prijsindicatie
- RS-stocknr.:
- 351-931
- Fabrikantnummer:
- IMZC120R053M2HXKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 27A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | PG-TO-247-4-U07 | |
| Series | IMZC120 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 53mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Maximum Gate Source Voltage Vgs | -10 to 25 V | |
| Maximum Power Dissipation Pd | 182W | |
| Forward Voltage Vf | 5.5V | |
| Maximum Operating Temperature | 200°C | |
| Length | 23.5mm | |
| Width | 16 mm | |
| Standards/Approvals | JEDEC47/20/22 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 27A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type PG-TO-247-4-U07 | ||
Series IMZC120 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 53mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Maximum Gate Source Voltage Vgs -10 to 25 V | ||
Maximum Power Dissipation Pd 182W | ||
Forward Voltage Vf 5.5V | ||
Maximum Operating Temperature 200°C | ||
Length 23.5mm | ||
Width 16 mm | ||
Standards/Approvals JEDEC47/20/22 | ||
Automotive Standard No | ||
The Infineon CoolSiC MOSFET discrete with high creepage package builds on the strengths of Generation 1 technology with significant improvement that provides an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.
Better energy efficiency
Cooling optimization
Higher power density
New robustness features
Highly reliable
Easy paralleling
Gerelateerde Links
- Infineon IMZC120 SiC N-Channel MOSFET 1200 V, 4-Pin PG-TO247-4-U07 IMZC120R012M2HXKSA1
- Infineon IMZC120 SiC N-Channel MOSFET 1200 V, 4-Pin PG-TO247-4-U07 IMZC120R034M2HXKSA1
- Infineon IMZC120 SiC N-Channel MOSFET 1200 V, 4-Pin PG-TO247-4-U07 IMZC120R078M2HXKSA1
- Infineon IMZC120 SiC N-Channel MOSFET 1200 V, 4-Pin PG-TO247-4-U07 IMZC120R017M2HXKSA1
- Infineon IMZC120 SiC N-Channel MOSFET 1200 V, 4-Pin PG-TO247-4-U07 IMZC120R040M2HXKSA1
- Infineon IMZC120 SiC N-Channel MOSFET 1200 V, 4-Pin PG-TO247-4-U07 IMZC120R022M2HXKSA1
- Infineon IMZC120 SiC N-Channel MOSFET 1200 V, 4-Pin PG-TO247-4-U07 IMZC120R026M2HXKSA1
- Infineon AIM SiC N-Channel MOSFET 1200 V, 4-Pin PG-TO247-4 AIMZH120R020M1TXKSA1