Infineon IMBG65 Type N-Channel MOSFET, 170 A, 650 V Enhancement, 7-Pin PG-TO263-7 IMBG65R009M1HXTMA1
- RS-stocknr.:
- 351-987
- Fabrikantnummer:
- IMBG65R009M1HXTMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 43,75
(excl. BTW)
€ 52,94
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Laatste voorraad RS
- Laatste 1.000 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 43,75 |
| 10 - 99 | € 39,38 |
| 100 + | € 36,32 |
*prijsindicatie
- RS-stocknr.:
- 351-987
- Fabrikantnummer:
- IMBG65R009M1HXTMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 170A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Output Power | 555W | |
| Series | IMBG65 | |
| Package Type | PG-TO263-7 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.2mm | |
| Width | 9.45 mm | |
| Standards/Approvals | JEDEC | |
| Height | 4.5mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 170A | ||
Maximum Drain Source Voltage Vds 650V | ||
Output Power 555W | ||
Series IMBG65 | ||
Package Type PG-TO263-7 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 10.2mm | ||
Width 9.45 mm | ||
Standards/Approvals JEDEC | ||
Height 4.5mm | ||
Automotive Standard No | ||
The Infineon CoolSiC is built over the solid silicon carbide technology. Leveraging the wide bandgap SiC material characteristics, it offers a unique combination of performance, reliability and ease of use. Suitable for high temperature and harsh operations, it enables the simplified and cost effective deployment of the highest system efficiency.
Optimized switching behaviour at higher currents
Commutation robust fast body diode with low Qfr
Superior gate oxide reliability
Increased avalanche capability
Compatible with standard drivers
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