Infineon AIMZA75 Type N-Channel MOSFET, 163 A, 750 V Enhancement, 4-Pin PG-TO247-4 AIMZA75R008M1HXKSA1
- RS-stocknr.:
- 351-988
- Fabrikantnummer:
- AIMZA75R008M1HXKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 52,92
(excl. BTW)
€ 64,03
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
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- Plus verzending 240 stuk(s) vanaf 16 maart 2026
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 52,92 |
| 10 - 99 | € 47,63 |
| 100 + | € 43,93 |
*prijsindicatie
- RS-stocknr.:
- 351-988
- Fabrikantnummer:
- AIMZA75R008M1HXKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 163A | |
| Maximum Drain Source Voltage Vds | 750V | |
| Series | AIMZA75 | |
| Package Type | PG-TO247-4 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 14.0mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 517W | |
| Forward Voltage Vf | 5.3V | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Typical Gate Charge Qg @ Vgs | 178nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 21.1mm | |
| Width | 15.9 mm | |
| Standards/Approvals | AEC Q101 | |
| Height | 5.1mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 163A | ||
Maximum Drain Source Voltage Vds 750V | ||
Series AIMZA75 | ||
Package Type PG-TO247-4 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 14.0mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 517W | ||
Forward Voltage Vf 5.3V | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Typical Gate Charge Qg @ Vgs 178nC | ||
Maximum Operating Temperature 175°C | ||
Length 21.1mm | ||
Width 15.9 mm | ||
Standards/Approvals AEC Q101 | ||
Height 5.1mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon CoolSiC Automotive MOSFET is built over the solid silicon carbide technology. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density.
Superior efficiency in hard switching
Enables higher switching frequency
Higher reliability
Robustness against parasitic turn
Unipolar driving
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