Microchip VN2460 Type N-Channel Single MOSFETs, 250 mA, 600 V Enhancement, 3-Pin SOT-89 VN2460N8-G
- RS-stocknr.:
- 598-312
- Fabrikantnummer:
- VN2460N8-G
- Fabrikant:
- Microchip
Subtotaal (1 rol van 2000 eenheden)*
€ 2.070,00
(excl. BTW)
€ 2.504,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 27 april 2026
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Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2000 + | € 1,035 | € 2.070,00 |
*prijsindicatie
- RS-stocknr.:
- 598-312
- Fabrikantnummer:
- VN2460N8-G
- Fabrikant:
- Microchip
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Microchip | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 250mA | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | VN2460 | |
| Package Type | SOT-89 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.6 mm | |
| Length | 4.6mm | |
| Standards/Approvals | RoHS | |
| Height | 1.6mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Microchip | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 250mA | ||
Maximum Drain Source Voltage Vds 600V | ||
Series VN2460 | ||
Package Type SOT-89 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 150°C | ||
Width 2.6 mm | ||
Length 4.6mm | ||
Standards/Approvals RoHS | ||
Height 1.6mm | ||
Automotive Standard No | ||
The Microchip N Channel enhancement-mode vertical MOSFET is a normally-off transistor that uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination provides the power handling capabilities of bipolar transistors while offering the high input impedance and positive temperature coefficient typical of MOS devices. As with all MOS structures, the device is free from thermal runaway and thermally induced secondary breakdown, ensuring reliable performance even under demanding conditions.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Excellent thermal stability
Integral source drain diode
High input impedance and high gain
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