Microchip DN2625 Type N-Channel MOSFET, 250 V Depletion, 3-Pin TO-252 DN2625K4-G
- RS-stocknr.:
- 598-727
- Fabrikantnummer:
- DN2625K4-G
- Fabrikant:
- Microchip
Subtotaal (1 rol van 2000 eenheden)*
€ 3.174,00
(excl. BTW)
€ 3.840,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 06 april 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2000 + | € 1,587 | € 3.174,00 |
*prijsindicatie
- RS-stocknr.:
- 598-727
- Fabrikantnummer:
- DN2625K4-G
- Fabrikant:
- Microchip
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Microchip | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | TO-252 | |
| Series | DN2625 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Channel Mode | Depletion | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Microchip | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type TO-252 | ||
Series DN2625 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Channel Mode Depletion | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Microchip Low threshold depletion-mode transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Very low gate threshold voltage
Designed to be source driven
Low switching losses
Low effective output capacitance
Designed for inductive loads
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