Microchip DN2470 Type N-Channel RF MOSFET, 170 mA, 700 V Depletion, 3-Pin TO-252 DN2470K4-G
- RS-stocknr.:
- 598-941
- Fabrikantnummer:
- DN2470K4-G
- Fabrikant:
- Microchip
Subtotaal (1 rol van 2000 eenheden)*
€ 2.070,00
(excl. BTW)
€ 2.504,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 13 april 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2000 + | € 1,035 | € 2.070,00 |
*prijsindicatie
- RS-stocknr.:
- 598-941
- Fabrikantnummer:
- DN2470K4-G
- Fabrikant:
- Microchip
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Microchip | |
| Channel Type | Type N | |
| Product Type | RF MOSFET | |
| Maximum Continuous Drain Current Id | 170mA | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | TO-252 | |
| Series | DN2470 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS-compliant | |
| Width | 0.265 in | |
| Length | 0.245in | |
| Height | 0.94in | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Microchip | ||
Channel Type Type N | ||
Product Type RF MOSFET | ||
Maximum Continuous Drain Current Id 170mA | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type TO-252 | ||
Series DN2470 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS-compliant | ||
Width 0.265 in | ||
Length 0.245in | ||
Height 0.94in | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Microchip Low threshold depletion-mode transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FET is ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
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