onsemi NTT Type N-Channel Single MOSFETs, 178 A, 40 V Enhancement, 8-Pin WDFN8 NTTFS1D4N04XMTAG
- RS-stocknr.:
- 648-510
- Fabrikantnummer:
- NTTFS1D4N04XMTAG
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 rol van 5 eenheden)*
€ 6,54
(excl. BTW)
€ 7,915
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 13 juli 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 5 - 45 | € 1,308 | € 6,54 |
| 50 - 245 | € 0,812 | € 4,06 |
| 250 - 495 | € 0,47 | € 2,35 |
| 500 + | € 0,458 | € 2,29 |
*prijsindicatie
- RS-stocknr.:
- 648-510
- Fabrikantnummer:
- NTTFS1D4N04XMTAG
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 178A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | WDFN8 | |
| Series | NTT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.43mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 83W | |
| Typical Gate Charge Qg @ Vgs | 35.4nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 3.3 mm | |
| Standards/Approvals | RoHS, Pb-Free | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 178A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type WDFN8 | ||
Series NTT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.43mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 83W | ||
Typical Gate Charge Qg @ Vgs 35.4nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 3.3 mm | ||
Standards/Approvals RoHS, Pb-Free | ||
Automotive Standard No | ||
- Land van herkomst:
- MY
The ON Semiconductor Latest 40V standard gate level Power MOSFET Technology with best-in-class On-Resistance for motor driver application. Lower On-Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress without extra snubber circuit in applications.
Low RDS(on)
Low Capacitance
Small Footprint
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