onsemi NVM Type N-Channel Single MOSFETs, 233 A, 40 V Enhancement, 5-Pin DFNW-5 NVMFWS1D1N04XMT1G
- RS-stocknr.:
- 648-512
- Fabrikantnummer:
- NVMFWS1D1N04XMT1G
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 rol van 5 eenheden)*
€ 12,42
(excl. BTW)
€ 15,03
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 950 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 5 - 45 | € 2,484 | € 12,42 |
| 50 - 245 | € 1,54 | € 7,70 |
| 250 - 495 | € 0,89 | € 4,45 |
| 500 + | € 0,872 | € 4,36 |
*prijsindicatie
- RS-stocknr.:
- 648-512
- Fabrikantnummer:
- NVMFWS1D1N04XMT1G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 233A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | DFNW-5 | |
| Series | NVM | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1.05mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 49.3nC | |
| Maximum Power Dissipation Pd | 104W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Length | 5mm | |
| Standards/Approvals | RoHS, Pb-Free | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 233A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type DFNW-5 | ||
Series NVM | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1.05mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 49.3nC | ||
Maximum Power Dissipation Pd 104W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Length 5mm | ||
Standards/Approvals RoHS, Pb-Free | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- MY
The ON Semiconductor Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
Small Footprint
Low RDS(on)
Low QG and Capacitance
Wettable Flank Option
RoHS Compliant
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