onsemi NVMFWS Type N-Channel MOSFET, 156 A, 80 V Enhancement, 5-Pin DFNW-5 NVMFWS2D5N08XT1G
- RS-stocknr.:
- 220-574
- Fabrikantnummer:
- NVMFWS2D5N08XT1G
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 rol van 5 eenheden)*
€ 15,20
(excl. BTW)
€ 18,40
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 1.335 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 5 - 45 | € 3,04 | € 15,20 |
| 50 - 95 | € 2,89 | € 14,45 |
| 100 - 495 | € 2,676 | € 13,38 |
| 500 - 995 | € 2,464 | € 12,32 |
| 1000 + | € 2,372 | € 11,86 |
*prijsindicatie
- RS-stocknr.:
- 220-574
- Fabrikantnummer:
- NVMFWS2D5N08XT1G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 156A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | NVMFWS | |
| Package Type | DFNW-5 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 2.55mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 133W | |
| Forward Voltage Vf | 0.82V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 | |
| Length | 5mm | |
| Width | 6 mm | |
| Automotive Standard | AEC-Q | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 156A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series NVMFWS | ||
Package Type DFNW-5 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 2.55mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 133W | ||
Forward Voltage Vf 0.82V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 | ||
Length 5mm | ||
Width 6 mm | ||
Automotive Standard AEC-Q | ||
- Land van herkomst:
- MY
The ON Semiconductor Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
Halogen Free
RoHS Compliant
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