Vishay E Type N-Channel Single MOSFETs, 38 A, 600 V Enhancement, 8-Pin PowerPAK
- RS-stocknr.:
- 653-080
- Fabrikantnummer:
- SIHR100N60E-T1-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 rol van 1 eenheid)*
€ 6,72
(excl. BTW)
€ 8,13
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 11 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Rol(len) | Per rol |
|---|---|
| 1 - 9 | € 6,72 |
| 10 - 49 | € 6,53 |
| 50 - 99 | € 6,31 |
| 100 + | € 5,45 |
*prijsindicatie
- RS-stocknr.:
- 653-080
- Fabrikantnummer:
- SIHR100N60E-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 38A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | PowerPAK | |
| Series | E | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.105Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Power Dissipation Pd | 347W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 8 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 38A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type PowerPAK | ||
Series E | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.105Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Power Dissipation Pd 347W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 8 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Vishay 4th generation E Series Power MOSFET designed for high-efficiency switching applications. It features a low figure of merit (FOM), reduced effective capacitance, and optimized thermal performance in a Compact PowerPAK 8x8LR package. Ideal for use in server, telecom, and power factor correction supplies, it delivers reliable performance in demanding environments.
Reduced switching and conduction losses
Pb Free
Halogen free
RoHS compliant
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