Vishay E Type N-Channel Single MOSFETs, 38 A, 600 V Enhancement, 8-Pin PowerPAK SIHR100N60E-T1-GE3

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Subtotaal (1 rol van 3000 eenheden)*

€ 12.504,00

(excl. BTW)

€ 15.129,00

(incl. BTW)

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RS-stocknr.:
653-079
Fabrikantnummer:
SIHR100N60E-T1-GE3
Fabrikant:
Vishay
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Merk

Vishay

Channel Type

Type N

Product Type

Single MOSFETs

Maximum Continuous Drain Current Id

38A

Maximum Drain Source Voltage Vds

600V

Package Type

PowerPAK

Series

E

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.105Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±30 V

Typical Gate Charge Qg @ Vgs

34nC

Maximum Power Dissipation Pd

347W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Width

8 mm

Standards/Approvals

No

Automotive Standard

No

Land van herkomst:
CN
The Vishay 4th generation E Series Power MOSFET designed for high-efficiency switching applications. It features a low figure of merit (FOM), reduced effective capacitance, and optimized thermal performance in a Compact PowerPAK 8x8LR package. Ideal for use in server, telecom, and power factor correction supplies, it delivers reliable performance in demanding environments.

Reduced switching and conduction losses

Pb Free

Halogen free

RoHS compliant

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