Vishay SISS5812DN N-Channel Single MOSFETs, 42.8 A, 80 V Enhancement, 8-Pin PowerPAK SISS5812DN-T1-GE3
- RS-stocknr.:
- 653-132
- Fabrikantnummer:
- SISS5812DN-T1-GE3
- Fabrikant:
- Vishay
Momenteel niet beschikbaar
Sorry, we weten niet wanneer dit weer voorradig zal zijn.
- RS-stocknr.:
- 653-132
- Fabrikantnummer:
- SISS5812DN-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 42.8A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | SISS5812DN | |
| Package Type | PowerPAK | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0135Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 44.6W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 830μm | |
| Width | 3.4mm | |
| Standards/Approvals | No | |
| Length | 3.4mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type Single MOSFETs | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 42.8A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series SISS5812DN | ||
Package Type PowerPAK | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0135Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 44.6W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 830μm | ||
Width 3.4mm | ||
Standards/Approvals No | ||
Length 3.4mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Vishay TrenchFET Gen V N-Channel Power MOSFET rated for 80 V drain-source voltage. Packaged in a Compact PowerPAK 1212-8S, it's Ideal for AI server power solutions, DC/DC converters, and load switching.
Pb Free
Halogen free
RoHS compliant
Gerelateerde Links
- Vishay SISS5812DN Type N-Channel Single MOSFETs 80 V Enhancement, 8-Pin PowerPAK
- Vishay Type N-Channel MOSFET 60 V Depletion, 8-Pin PowerPAK SO-8 SIR4608DP-T1-GE3
- Vishay SIR4156LDP Type N-Channel Single MOSFETs 100 V Enhancement, 8-Pin PowerPAK SIR4156LDP-T1-GE3
- Vishay SI2122DS Type N-Channel Single MOSFETs 100 V Enhancement, 3-Pin PowerPAK SI2122DS-T1-GE3
- Vishay SIRA14DDP Type N-Channel Single MOSFETs 30 V Enhancement, 8-Pin PowerPAK SIRA14DDP-T1-GE3
- Vishay SIR4406DP Type N-Channel Single MOSFETs 40 V Enhancement, 8-Pin PowerPAK SIR4406DP-T1-GE3
- Vishay SIJ4406DP Type N-Channel Single MOSFETs 40 V Enhancement, 4-Pin PowerPAK SIJ4406DP-T1-GE3
- Vishay SIS4406DN Type N-Channel Single MOSFETs 40 V Enhancement, 8-Pin PowerPAK SIS4406DN-T1-GE3