Vishay SISS5208DN N-Channel Single MOSFETs, 172 A, 20 V Enhancement, 8-Pin PowerPAK SISS5208DN-T1-GE3

RS-stocknr.:: 653-148
Fabrikantnummer:: SISS5208DN-T1-GE3
Fabrikant:: Vishay

Vishay SISS5208DN N-Channel Single MOSFETs, 172 A, 20 V Enhancement, 8-Pin PowerPAK SISS5208DN-T1-GE3

Subtotaal (1 rol van 3000 eenheden)*

€ 1.740,00

(excl. BTW)

€ 2.100,00

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Op voorraad

Plus verzending 3.000 stuk(s) vanaf 02 november 2026

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Aantal stuks	Per stuk	Per rol*
3000 +	€ 0,58	€ 1.740,00

*prijsindicatie

RS-stocknr.:: 653-148
Fabrikantnummer:: SISS5208DN-T1-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	N
	Product Type	Single MOSFETs
	Maximum Continuous Drain Current Id	172A
	Maximum Drain Source Voltage Vds	20V
	Package Type	PowerPAK
	Series	SISS5208DN
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.0013Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	24.6nC
	Maximum Gate Source Voltage Vgs	8V
	Maximum Power Dissipation Pd	56.8W
	Forward Voltage Vf	1.1V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Width	3.4mm
	Standards/Approvals	RoHS
	Height	830μm
	Length	3.4mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type N
	Product Type Single MOSFETs
	Maximum Continuous Drain Current Id 172A
	Maximum Drain Source Voltage Vds 20V
	Package Type PowerPAK
	Series SISS5208DN
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.0013Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 24.6nC
	Maximum Gate Source Voltage Vgs 8V
	Maximum Power Dissipation Pd 56.8W
	Forward Voltage Vf 1.1V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Width 3.4mm
	Standards/Approvals RoHS
	Height 830μm
	Length 3.4mm
	Automotive Standard No

Datasheet - SISS5208DN-T1-GE3

Land van herkomst:: CN

Vishay SISS5208DN Series Single MOSFETs, 56.8W Maximum Power Dissipation, 20V Maximum Drain Source Voltage - SISS5208DN-T1-GE3

This single MOSFETs device is an N-channel enhancement transistor designed for high-current switching in compact surface-mount applications. It operates across a wide temperature range and is intended for situations requiring low conduction losses and rapid gate-driven switching. The package supports mounting on PCB land patterns where thermal and electrical performance are priorities.

Features and Benefits:

• Very low on-resistance 0.0013Ω reduces conduction losses
• High continuous drain current 172A supports heavy loads
• Low forward voltage 1.1V improves efficiency under load
• Gate charge 24.6nC enables controlled switching speed
• Maximum power dissipation 56.8W manages elevated thermal stress
• Gate-source withstand 8V permits robust drive margin

Applications

• Suitable for synchronous buck converter power stages
• Ideal for high-current motor driver outputs
• Used with server power distribution circuits
• Can be used for battery protection and management
• Suitable for telecom rectifier and power-supply rails

What voltage stress can it withstand between drain and source?

It is rated to tolerate up to 20V between drain and source under normal conditions.

How does the device behave in extreme temperatures?

It is specified to operate from -55°C up to 150°C, allowing it to function across typical industrial temperature ranges.

What mounting style is required for assembly?

It is supplied in a PowerPAK surface-mount package, intended for PCB solder attachment using standard reflow processes.

How many electrical connections does it provide?

The device has an eight-pin configuration to facilitate power and gate connections while optimising thermal paths.