Vishay SISS5208DN Type N-Channel Single MOSFETs, 172 A, 20 V Enhancement, 8-Pin PowerPAK SISS5208DN-T1-GE3

RS-stocknr.:: 653-148
Fabrikantnummer:: SISS5208DN-T1-GE3
Fabrikant:: Vishay

Vishay SISS5208DN Type N-Channel Single MOSFETs, 172 A, 20 V Enhancement, 8-Pin PowerPAK SISS5208DN-T1-GE3

Subtotaal (1 rol van 3000 eenheden)*

€ 1.740,00

(excl. BTW)

€ 2.100,00

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Laatste voorraad RS

Laatste 3.000 stuk(s), klaar voor verzending vanaf een andere locatie

Aantal stuks	Per stuk	Per rol*
3000 +	€ 0,58	€ 1.740,00

*prijsindicatie

RS-stocknr.:: 653-148
Fabrikantnummer:: SISS5208DN-T1-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	Single MOSFETs
	Channel Type	Type N
	Maximum Continuous Drain Current Id	172A
	Maximum Drain Source Voltage Vds	20V
	Series	SISS5208DN
	Package Type	PowerPAK
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.0013Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	56.8W
	Forward Voltage Vf	1.1V
	Maximum Gate Source Voltage Vgs	8V
	Typical Gate Charge Qg @ Vgs	24.6nC
	Maximum Operating Temperature	150°C
	Width	3.40mm
	Length	3.40mm
	Standards/Approvals	RoHS
	Height	0.83mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type Single MOSFETs
	Channel Type Type N
	Maximum Continuous Drain Current Id 172A
	Maximum Drain Source Voltage Vds 20V
	Series SISS5208DN
	Package Type PowerPAK
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.0013Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 56.8W
	Forward Voltage Vf 1.1V
	Maximum Gate Source Voltage Vgs 8V
	Typical Gate Charge Qg @ Vgs 24.6nC
	Maximum Operating Temperature 150°C
	Width 3.40mm
	Length 3.40mm
	Standards/Approvals RoHS
	Height 0.83mm
	Automotive Standard No

Datasheet - SISS5208DN-T1-GE3

Land van herkomst:: CN

Vishay SISS5208DN Series Single MOSFETs, 20V Maximum Drain Source Voltage, 172A Maximum Continuous Drain Current - SISS5208DN-T1-GE3

This single MOSFET is a surface-mount N-channel enhancement device designed for high-current switching in Compact power assemblies. It operates across a wide temperature range and is intended for applications requiring fast switching and substantial continuous drain capability while maintaining efficient thermal behaviour.

Features and Benefits:

• 172A continuous drain current enables high-load handling • 20V drain-source rating supports low-voltage power rails • 0.0013Ω Rds(on) reduces conduction losses • 24.6nC gate charge allows controlled switching dynamics • 56.8W power dissipation manages thermal stress under load • 150°C maximum operating temperature permits elevated environment use

Applications

• Suitable for motor drive stages in automation equipment • Ideal for high-current DC-DC converters in power supplies • Used for load switching in industrial control panels • Can be used for H-bridge output stages in robotics • Used with high-power MOSFET arrays in inverter modules

What gate voltage range should I plan for in gate-driver design?

The device accepts gate-source voltages up to 8V, so a gate driver that provides Vgs within this limit will ensure safe operation.

How does the package affect PCB layout and thermal paths?

The PowerPAK surface-mount package concentrates thermal and electrical connections on a small footprint, so copper pours and thermal vias are recommended to dissipate the device’s 56.8W power loss.

What ambient conditions are permissible for reliable operation?

The component is rated to operate down to -55°C and up to 150°C, allowing use across harsh industrial temperature ranges.

How should inrush or transient currents be considered in design?

With a low Rds(on) of 0.0013Ω and high continuous current capacity, transient stress should be assessed against surge capabilities and PCB trace current ratings to prevent overstress.