Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 7 A, 60 V Enhancement, 8-Pin SO-8 SQ4946CEY-T1_GE3
- RS-stocknr.:
- 228-2946
- Fabrikantnummer:
- SQ4946CEY-T1_GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 10,27
(excl. BTW)
€ 12,43
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 80 stuk(s) vanaf 11 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 90 | € 1,027 | € 10,27 |
| 100 - 240 | € 0,974 | € 9,74 |
| 250 - 490 | € 0,769 | € 7,69 |
| 500 - 990 | € 0,72 | € 7,20 |
| 1000 + | € 0,565 | € 5,65 |
*prijsindicatie
- RS-stocknr.:
- 228-2946
- Fabrikantnummer:
- SQ4946CEY-T1_GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | TrenchFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 11.7nC | |
| Maximum Power Dissipation Pd | 4W | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | AEC-Q101 | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series TrenchFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 11.7nC | ||
Maximum Power Dissipation Pd 4W | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Dual | ||
Standards/Approvals AEC-Q101 | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Vishay TrenchFET automotive dual N-channel is power MOSFET.
100 % Rg and UIS tested
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