ROHM HT8MD5HT Dual N-Channel Single MOSFETs, 80 V Enhancement, 8-Pin HSMT-8 HT8MD5HTB1
- RS-stocknr.:
- 687-385
- Fabrikantnummer:
- HT8MD5HTB1
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Subtotaal (1 rol van 2 eenheden)*
€ 3,50
(excl. BTW)
€ 4,24
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 200 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2 - 18 | € 1,75 | € 3,50 |
| 20 - 48 | € 1,55 | € 3,10 |
| 50 - 198 | € 1,39 | € 2,78 |
| 200 - 998 | € 1,12 | € 2,24 |
| 1000 + | € 1,085 | € 2,17 |
*prijsindicatie
- RS-stocknr.:
- 687-385
- Fabrikantnummer:
- HT8MD5HTB1
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Channel Type | Dual N | |
| Product Type | Single MOSFETs | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | HT8MD5HT | |
| Package Type | HSMT-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 165mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 3.1nC | |
| Maximum Power Dissipation Pd | 13.0W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.4 mm | |
| Length | 3.45mm | |
| Height | 0.8mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Channel Type Dual N | ||
Product Type Single MOSFETs | ||
Maximum Drain Source Voltage Vds 80V | ||
Series HT8MD5HT | ||
Package Type HSMT-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 165mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 3.1nC | ||
Maximum Power Dissipation Pd 13.0W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 3.4 mm | ||
Length 3.45mm | ||
Height 0.8mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ROHM Power MOSFET designed for versatile electronic applications. With its dual N channel and P channel configuration, this component delivers exceptional performance, allowing for effective power management in motor drives and other demanding circuits. Features such as low on-resistance ensure minimal power loss during operation, while the HSMT8 packaging allows for a compact footprint without compromising performance. HT8MD5H supports a wide voltage range and is compliant with RoHS and halogen-free standards, making it an ideal choice for environmentally-conscious designs. Built with reliability in mind, this MOSFET is suitable for various applications requiring robust performance under varying conditions.
Low on resistance designs enhance efficiency in power applications
High power capabilities in a compact HSMT8 package streamline integration
RoHS compliant and halogen-free construction supports eco-friendly designs
100% Rg and UIS tested for reliability under demanding operational conditions
Optimised for motor drive applications, ensuring effective power control
Wide voltage range ensures versatility in various electronic environments
Designed to withstand maximum junction temperatures of up to 150°C
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