ROHM RH7G04CBKFRA Type N-Channel Single MOSFETs, 40 V Enhancement, 8-Pin DFN3333T8LSAB RH7G04CBKFRATCB

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  • Verzending vanaf 21 januari 2026
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2 - 18€ 0,88€ 1,76
20 - 48€ 0,78€ 1,56
50 - 198€ 0,695€ 1,39
200 - 998€ 0,565€ 1,13
1000 +€ 0,55€ 1,10

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Verpakkingsopties
RS-stocknr.:
687-450
Fabrikantnummer:
RH7G04CBKFRATCB
Fabrikant:
ROHM
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Merk

ROHM

Product Type

Single MOSFETs

Channel Type

Type N

Maximum Drain Source Voltage Vds

40V

Package Type

DFN3333T8LSAB

Series

RH7G04CBKFRA

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5.0mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

19.1nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

62W

Maximum Operating Temperature

150°C

Length

3.4mm

Height

1.1mm

Width

3.4 mm

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

Land van herkomst:
JP
The ROHM N channel Power MOSFET designed to operate efficiently in demanding applications. With a maximum drain-source voltage of 40V and a continuous drain current capability of up to 40A, this component excels in power switching and amplification tasks. Its low on-state resistance of 5.0 mΩ ensures minimal power loss during operation, making it ideal for both automotive and industrial applications. AEC-Q101 qualified, this device provides reliable performance with 100% avalanche testing, ensuring safety and durability in various operating conditions.

Designed for high efficiency with low on-state resistance, reducing heat generation

AEC Q101 qualified, ensuring reliability for automotive standards

100% avalanche tested for enhanced safety under transient conditions

Continuous drain current capability of up to 40A for demanding applications

Operating junction temperature range from -55 to +175°C for versatile usage

Suitable for applications in ADAS, lighting, and body electronics

Complies with strict quality control measures for dependable performance

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