ROHM RH7G04BBJFRAT Type P-Channel Single MOSFETs, -40 V Enhancement, 8-Pin DFN3333T8LSAB RH7G04BBJFRATCB
- RS-stocknr.:
- 687-447
- Fabrikantnummer:
- RH7G04BBJFRATCB
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Subtotaal (1 rol van 2 eenheden)*
€ 1,86
(excl. BTW)
€ 2,26
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 100 stuk(s) vanaf 06 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2 - 18 | € 0,93 | € 1,86 |
| 20 - 48 | € 0,82 | € 1,64 |
| 50 - 198 | € 0,74 | € 1,48 |
| 200 - 998 | € 0,595 | € 1,19 |
| 1000 + | € 0,58 | € 1,16 |
*prijsindicatie
- RS-stocknr.:
- 687-447
- Fabrikantnummer:
- RH7G04BBJFRATCB
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Channel Type | Type P | |
| Product Type | Single MOSFETs | |
| Maximum Drain Source Voltage Vds | -40V | |
| Series | RH7G04BBJFRAT | |
| Package Type | DFN3333T8LSAB | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 11.9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 5 V | |
| Maximum Power Dissipation Pd | 75W | |
| Typical Gate Charge Qg @ Vgs | 50nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.4mm | |
| Standards/Approvals | RoHS | |
| Height | 1.1mm | |
| Width | 3.4 mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Channel Type Type P | ||
Product Type Single MOSFETs | ||
Maximum Drain Source Voltage Vds -40V | ||
Series RH7G04BBJFRAT | ||
Package Type DFN3333T8LSAB | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 11.9mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 5 V | ||
Maximum Power Dissipation Pd 75W | ||
Typical Gate Charge Qg @ Vgs 50nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 3.4mm | ||
Standards/Approvals RoHS | ||
Height 1.1mm | ||
Width 3.4 mm | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- JP
The ROHM Power MOSFET is engineered for robust performance in demanding applications, offering exceptional efficiency and reliability. With a maximum Drain-Source voltage of -40V and continuous drain current capabilities reaching up to 40A, this component excels in power management. Its low on-state resistance of just 11.9mΩ enhances energy efficiency, making it an ideal choice for automotive and industrial systems. Designed to withstand temperatures from -55 to 175°C, this MOSFET ensures durability and stability under a wide range of conditions, while its AEC-Q101 qualification signals its suitability for automotive environments, contributing to enhanced device safety and efficacy.
AEC Q101 qualified for reliable automotive applications
100% avalanche tested for enhanced safety under extreme conditions
Low thermal resistance junction-case, promoting efficient heat dissipation
Wide operating temperature range ensures performance stability in harsh environments
Minimal on-state resistance optimises energy efficiency, reducing overall power loss
Capacitive characteristics tailored for fast switching applications, enhancing performance
Wettable flanks design facilitates reliable soldering and improved assembly quality
Suitability for various applications, including ADAS, lighting, and body control systems
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