ROHM RH7G04CBJFRA Type P-Channel Single MOSFETs, -40 V Enhancement, 8-Pin DFN3333T8LSAB RH7G04CBJFRATCB

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  • Verzending vanaf 21 januari 2026
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200 - 998€ 0,52€ 1,04
1000 +€ 0,51€ 1,02

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Verpakkingsopties
RS-stocknr.:
687-463
Fabrikantnummer:
RH7G04CBJFRATCB
Fabrikant:
ROHM
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Merk

ROHM

Product Type

Single MOSFETs

Channel Type

Type P

Maximum Drain Source Voltage Vds

-40V

Package Type

DFN3333T8LSAB

Series

RH7G04CBJFRA

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

17.7mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

62W

Typical Gate Charge Qg @ Vgs

33nC

Maximum Gate Source Voltage Vgs

5 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Height

1.1mm

Width

3.4 mm

Length

3.4mm

Automotive Standard

AEC-Q101

Land van herkomst:
JP
The ROHM Power MOSFET designed to deliver exceptional performance in demanding applications. This component is specifically engineered for high-efficiency switching, making it ideal for automotive, lighting, and other high-reliability systems. With its robust thermal characteristics, including a maximum power dissipation of 62W and an impressive ±40A continuous drain current, the RH7G04CBJFRA ensures reliable operation under various conditions. Furthermore, this MOSFET integrates advanced features such as avalanche testing and AEC-Q101 qualification, guaranteeing safety and durability in critical environments.

Features a low on-state resistance of 17.7mΩ for improved efficiency

Delivers a maximum pulsed drain current of ±80A, enabling high-performance applications

Utilises wettable flanks for enhanced solder joint reliability

Offers robust thermal resistance to maintain performance under heavy loads

Operates effectively across a wide temperature range of -55 to +175°C

Includes a 100% avalanche test specification for increased safety

Employed in a variety of applications including ADAS and automotive lighting

Comes with detailed packaging specifications for user-friendly integration

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