Infineon OptiMOS 6 Type N-Channel Single MOSFETs, 75 A, 200 V Enhancement, 3-Pin TO-263 IPB175N20NM6ATMA1
- RS-stocknr.:
- 690-440
- Fabrikantnummer:
- IPB175N20NM6ATMA1
- Fabrikant:
- Infineon
Afbeelding representeert productcategorie
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 5 eenheden)*
€ 20,18
(excl. BTW)
€ 24,42
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 01 september 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 4,036 | € 20,18 |
| 50 - 245 | € 3,266 | € 16,33 |
| 250 - 495 | € 2,506 | € 12,53 |
| 500 + | € 2,002 | € 10,01 |
*prijsindicatie
- RS-stocknr.:
- 690-440
- Fabrikantnummer:
- IPB175N20NM6ATMA1
- Fabrikant:
- Infineon
Specificaties
Wetgeving en compliance
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 75A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-263 | |
| Series | OptiMOS 6 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 10.2mm | |
| Standards/Approvals | ISO 128-30, RoHS | |
| Height | 4.5mm | |
| Length | 15.9mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 75A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-263 | ||
Series OptiMOS 6 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Maximum Operating Temperature 150°C | ||
Width 10.2mm | ||
Standards/Approvals ISO 128-30, RoHS | ||
Height 4.5mm | ||
Length 15.9mm | ||
Automotive Standard AEC-Q101 | ||
Gerelateerde Links
- Infineon OptiMOS Type N-Channel MOSFET & Diode 75 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS 3 Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS 3 Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-263 IPB020NE7N3GATMA1
- Infineon OptiMOS Type N-Channel MOSFET & Diode 75 V Enhancement, 3-Pin TO-263 IPB100N08S2L07ATMA1
- Infineon OptiMOS 6 Type N-Channel Single MOSFETs 200 V Enhancement, 3-Pin TO-220 IPP175N20NM6AKSA1
- Infineon OptiMOS Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263 IPB107N20N3GATMA1
- Infineon OptiMOS FD Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263