STMicroelectronics Sct N channel-Channel Power MOSFET, 110 A, 900 V Enhancement, 3-Pin HIP-247-3 SCT012W90G3AG
- RS-stocknr.:
- 719-464
- Fabrikantnummer:
- SCT012W90G3AG
- Fabrikant:
- STMicroelectronics
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|---|---|
| 1 - 4 | € 19,72 |
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*prijsindicatie
- RS-stocknr.:
- 719-464
- Fabrikantnummer:
- SCT012W90G3AG
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
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Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | Power MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 110A | |
| Maximum Drain Source Voltage Vds | 900V | |
| Series | Sct | |
| Package Type | HIP-247-3 | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 12mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Forward Voltage Vf | 2.8V | |
| Maximum Power Dissipation Pd | 625W | |
| Typical Gate Charge Qg @ Vgs | 138nC | |
| Maximum Operating Temperature | 200°C | |
| Width | 5.15 mm | |
| Height | 20.15mm | |
| Length | 15.75mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type Power MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 110A | ||
Maximum Drain Source Voltage Vds 900V | ||
Series Sct | ||
Package Type HIP-247-3 | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 12mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Forward Voltage Vf 2.8V | ||
Maximum Power Dissipation Pd 625W | ||
Typical Gate Charge Qg @ Vgs 138nC | ||
Maximum Operating Temperature 200°C | ||
Width 5.15 mm | ||
Height 20.15mm | ||
Length 15.75mm | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
AEC-Q101 qualified
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
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