STMicroelectronics SCT N channel-Channel Power MOSFET, 55 A, 650 V Enhancement, 3-Pin HIP-247-3 SCT018W65G3AG

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RS-stocknr.:
719-468
Fabrikantnummer:
SCT018W65G3AG
Fabrikant:
STMicroelectronics
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Merk

STMicroelectronics

Channel Type

N channel

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

55A

Maximum Drain Source Voltage Vds

650V

Series

SCT

Package Type

HIP-247-3

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

27mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

76nC

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

2.6V

Maximum Power Dissipation Pd

398W

Maximum Operating Temperature

200°C

Width

5.15 mm

Length

15.75mm

Height

20.15mm

Automotive Standard

AEC-Q101

Land van herkomst:
CN
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

AEC-Q101 qualified

Very fast and robust intrinsic body diode

Extremely low gate charge and input capacitance

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