STMicroelectronics SCT019 N channel-Channel Power MOSFET, 90 A, 1200 V Enhancement, 4-Pin Hip-247-4 SCT019W120G3-4AG
- RS-stocknr.:
- 719-469
- Fabrikantnummer:
- SCT019W120G3-4AG
- Fabrikant:
- STMicroelectronics
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- Verzending vanaf 19 februari 2027
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Aantal stuks | Per stuk |
|---|---|
| 1 - 4 | € 19,67 |
| 5 + | € 19,08 |
*prijsindicatie
- RS-stocknr.:
- 719-469
- Fabrikantnummer:
- SCT019W120G3-4AG
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | Hip-247-4 | |
| Series | SCT019 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 19.2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 2.8V | |
| Maximum Power Dissipation Pd | 486W | |
| Typical Gate Charge Qg @ Vgs | 120nC | |
| Maximum Operating Temperature | 200°C | |
| Length | 21.1mm | |
| Height | 5.1mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type Hip-247-4 | ||
Series SCT019 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 19.2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 2.8V | ||
Maximum Power Dissipation Pd 486W | ||
Typical Gate Charge Qg @ Vgs 120nC | ||
Maximum Operating Temperature 200°C | ||
Length 21.1mm | ||
Height 5.1mm | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
AEC-Q101 qualified
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency
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