STMicroelectronics SCT019 N channel-Channel Power MOSFET, 90 A, 1200 V Enhancement, 4-Pin Hip-247-4 SCT019W120G3-4AG

Bekijk alle MOSFETs
Bulkkorting beschikbaar

Subtotaal (1 eenheid)*

€ 17,57

(excl. BTW)

€ 21,26

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Tijdelijk niet op voorraad
  • Verzending vanaf 01 april 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks
Per stuk
1 - 4€ 17,57
5 +€ 17,04

*prijsindicatie

RS-stocknr.:
719-469
Fabrikantnummer:
SCT019W120G3-4AG
Fabrikant:
STMicroelectronics
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

STMicroelectronics

Channel Type

N channel

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

90A

Maximum Drain Source Voltage Vds

1200V

Series

SCT019

Package Type

Hip-247-4

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

19.2mΩ

Channel Mode

Enhancement

Forward Voltage Vf

2.8V

Typical Gate Charge Qg @ Vgs

120nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

486W

Maximum Gate Source Voltage Vgs

-10 to 22 V

Maximum Operating Temperature

200°C

Length

21.1mm

Height

5.1mm

Width

15.9 mm

Automotive Standard

AEC-Q101

Land van herkomst:
CN
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

AEC-Q101 qualified

Very low RDS(on) over the entire temperature range

High speed switching performances

Very fast and robust intrinsic body diode

Source sensing pin for increased efficiency

Gerelateerde Links