STMicroelectronics SCT019 N-Channel Power MOSFET, 90 A, 1.2 kV Enhancement, 4-Pin Hip-247-4 SCT019W120G3-4AG
- RS-stocknr.:
- 719-469
- Fabrikantnummer:
- SCT019W120G3-4AG
- Fabrikant:
- STMicroelectronics
Ontvang bulkkorting
Voeg 5 meer toe om 2% te besparen
Bekijk bulkkortingSubtotaal (1 eenheid)*
€ 19,67
(excl. BTW)
€ 23,80
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 26 juli 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Bespaar |
|---|---|---|
| 1 - 4 | € 19,67 | - |
| 5 + | € 19,08 | 2% |
*prijsindicatie
- RS-stocknr.:
- 719-469
- Fabrikantnummer:
- SCT019W120G3-4AG
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | Hip-247-4 | |
| Series | SCT019 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 19.2mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 120nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -10V, 22V | |
| Forward Voltage Vf | 2.8V | |
| Maximum Power Dissipation Pd | 486W | |
| Maximum Operating Temperature | 200°C | |
| Length | 21.1mm | |
| Width | 15.9mm | |
| Height | 5.1mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type Hip-247-4 | ||
Series SCT019 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 19.2mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 120nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -10V, 22V | ||
Forward Voltage Vf 2.8V | ||
Maximum Power Dissipation Pd 486W | ||
Maximum Operating Temperature 200°C | ||
Length 21.1mm | ||
Width 15.9mm | ||
Height 5.1mm | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
AEC-Q101 qualified
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency
Gerelateerde Links
- STMicroelectronics SCT N-Channel MOSFET 1.2 kV Enhancement, 4-Pin Hip-247-4 SCT015W120G3-4AG
- STMicroelectronics SCT N-Channel MOSFET 1.2 kV Enhancement, 4-Pin Hip-247-4 SCT070W120G3-4AG
- STMicroelectronics SCT N-Channel MOSFET 1.2 kV Enhancement, 4-Pin Hip-247-4 SCT020W120G3-4AG
- STMicroelectronics SCT N-Channel MOSFET 1.2 kV Enhancement, 4-Pin Hip-247-4 SCT040W120G3-4AG
- STMicroelectronics SCT N-Channel MOSFET 1.2 kV Enhancement, 4-Pin Hip-247-4 SCT025W120G3-4AG
- STMicroelectronics SCTWA40N120G2V-4 N-Channel MOSFET 1.2 kV, 3-Pin Hip-247
- STMicroelectronics SCTWA40N12G24AG N-Channel MOSFET 1.2 kV Enhancement, 4-Pin Hip-247
- STMicroelectronics SCT N-Channel MOSFET 650 V Enhancement, 4-Pin Hip-247-4 SCT027W65G3-4AG