STMicroelectronics STS N channel-Channel Power MOSFET, 10 A, 30 V Enhancement, 8-Pin SO-8 STS10N3LH5
- RS-stocknr.:
- 719-621
- Fabrikantnummer:
- STS10N3LH5
- Fabrikant:
- STMicroelectronics
Subtotaal (1 rol van 2500 eenheden)*
€ 770,00
(excl. BTW)
€ 932,50
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 09 april 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2500 + | € 0,308 | € 770,00 |
*prijsindicatie
- RS-stocknr.:
- 719-621
- Fabrikantnummer:
- STS10N3LH5
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | Power MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | STS | |
| Package Type | SO-8 | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.021Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 4.6nC | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Gate Source Voltage Vgs | ±22 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.75mm | |
| Width | 4 mm | |
| Length | 5mm | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type Power MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series STS | ||
Package Type SO-8 | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.021Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 4.6nC | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Gate Source Voltage Vgs ±22 V | ||
Maximum Operating Temperature 150°C | ||
Height 1.75mm | ||
Width 4 mm | ||
Length 5mm | ||
The STMicroelectronics STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM.
Extremely low on-resistance RDS(on)
Very low switching gate charge
High avalanche ruggedness
Low gate drive power losses
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