STMicroelectronics STH N channel-Channel Power MOSFET, 397 A, 60 V Enhancement, 6-Pin H2PAK STH345N6F7-6
- RS-stocknr.:
- 719-655
- Fabrikantnummer:
- STH345N6F7-6
- Fabrikant:
- STMicroelectronics
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€ 3,01
(excl. BTW)
€ 3,64
(incl. BTW)
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Aantal stuks | Per stuk |
|---|---|
| 1 + | € 3,01 |
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- RS-stocknr.:
- 719-655
- Fabrikantnummer:
- STH345N6F7-6
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 397A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | H2PAK | |
| Series | STH | |
| Mount Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 1.2mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 230nC | |
| Maximum Power Dissipation Pd | 341W | |
| Maximum Operating Temperature | 175°C | |
| Length | 9.3mm | |
| Width | 10.4 mm | |
| Height | 4.7mm | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 397A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type H2PAK | ||
Series STH | ||
Mount Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 1.2mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 230nC | ||
Maximum Power Dissipation Pd 341W | ||
Maximum Operating Temperature 175°C | ||
Length 9.3mm | ||
Width 10.4 mm | ||
Height 4.7mm | ||
- Land van herkomst:
- CN
The STMicroelectronics N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for Faster and more efficient switching.
Among the lowest RDS(on) on the market
Excellent FoM (figure of merit)
Low Crss/Ciss ratio for EMI immunity
High avalanche ruggedness