Vishay TrenchFET N-Channel MOSFET, 14 A, 60 V Enhancement, 8-Pin PowerPAK SI7120BDN-T1-GE3
- RS-stocknr.:
- 904-972
- Fabrikantnummer:
- SI7120BDN-T1-GE3
- Fabrikant:
- Vishay
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- Verzending vanaf 11 februari 2027
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Rol(len) | Per rol |
|---|---|
| 1 - 24 | € 0,41 |
| 25 - 99 | € 0,26 |
| 100 + | € 0,16 |
*prijsindicatie
- RS-stocknr.:
- 904-972
- Fabrikantnummer:
- SI7120BDN-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 14A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK | |
| Series | TrenchFET | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.021Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 19.8W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 4.3nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.3mm | |
| Standards/Approvals | ROHS | |
| Width | 3.3mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 14A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK | ||
Series TrenchFET | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.021Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 19.8W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 4.3nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Length 3.3mm | ||
Standards/Approvals ROHS | ||
Width 3.3mm | ||
Automotive Standard No | ||
- Land van herkomst:
- IL
The Vishay N-Channel MOSFET designed for efficient power management, providing enhanced performance in various electronic applications through Advanced features and robust reliability.
TrenchFET Gen IV technology optimises efficiency and reduces power loss
100% tested for R and UIS, ensuring consistent reliability
Lead (Pb)-free construction adheres to environmental standards
Optimised switching characteristics support high-speed applications
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