Vishay SiR N channel-Channel MOSFET, 337 A, 25 V Enhancement, 8-Pin PowerPAK SO-8 SiRA20DDP

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€ 1,76

(excl. BTW)

€ 2,13

(incl. BTW)

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RS-stocknr.:
735-153
Fabrikantnummer:
SiRA20DDP
Fabrikant:
Vishay
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Merk

Vishay

Product Type

MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

337A

Maximum Drain Source Voltage Vds

25V

Series

SiR

Package Type

PowerPAK SO-8

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.00061Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

104W

Forward Voltage Vf

25V

Maximum Gate Source Voltage Vgs

16V

Typical Gate Charge Qg @ Vgs

121nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

6mm

Standards/Approvals

RoHS

Height

2mm

Length

7mm

Automotive Standard

No

Land van herkomst:
CN
The Vishay N-Channel MOSFET rated for 60V drain-source voltage, optimized for high-efficiency switching in AI power server DC/DC converters and synchronous rectification circuits. It achieves very low on-resistance of 1.7mΩ maximum at 10V gate drive for minimal conduction losses in high-current applications

94A continuous drain current at TA=25°C

54.3nC typical total gate charge for fast switching

-55°C to +175°C extended junction temperature range

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