Vishay MaxSiC N channel-Channel MOSFET, 41 A, 1200 V N, 4-Pin TO-247AD MXP120A063SL-GE3
- RS-stocknr.:
- 790-415
- Fabrikantnummer:
- MXP120A063SL-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
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€ 9,73
(excl. BTW)
€ 11,77
(incl. BTW)
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- Verzending vanaf 08 januari 2027
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Aantal stuks | Per stuk |
|---|---|
| 1 - 4 | € 9,73 |
| 5 + | € 9,54 |
*prijsindicatie
- RS-stocknr.:
- 790-415
- Fabrikantnummer:
- MXP120A063SL-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 41A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | MaxSiC | |
| Package Type | TO-247AD | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 79mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 205W | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Forward Voltage Vf | 4.8V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 61nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.21mm | |
| Width | 16.13mm | |
| Standards/Approvals | RoHS | |
| Length | 23.6mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 41A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series MaxSiC | ||
Package Type TO-247AD | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 79mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 205W | ||
Maximum Gate Source Voltage Vgs 22V | ||
Forward Voltage Vf 4.8V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 61nC | ||
Maximum Operating Temperature 175°C | ||
Height 5.21mm | ||
Width 16.13mm | ||
Standards/Approvals RoHS | ||
Length 23.6mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Vishay 1200 V N-Channel SiC MOSFET is engineered for high-performance power applications, offering efficiency, speed, and reliability. Its Advanced design ensures robust operation under demanding conditions while maintaining eco-friendly compliance.
Fast switching speed enhances efficiency in power conversion
Short circuit withstand time of 3 μs increases device reliability
Low on-state resistance of 63 mΩ at 25 °C minimises energy loss
High voltage ratings of up to 1200 V support versatile applications
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