Vishay MaxSiC N channel-Channel MOSFET, 41 A, 1200 V N, 7-Pin TO-263-7L MXP120A063SE-T1GE3
- RS-stocknr.:
- 790-412
- Fabrikantnummer:
- MXP120A063SE-T1GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
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€ 8,94
(excl. BTW)
€ 10,82
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
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- Verzending vanaf 08 januari 2027
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Aantal stuks | Per stuk |
|---|---|
| 1 - 4 | € 8,94 |
| 5 + | € 8,76 |
*prijsindicatie
- RS-stocknr.:
- 790-412
- Fabrikantnummer:
- MXP120A063SE-T1GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 41A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-263-7L | |
| Series | MaxSiC | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 79mΩ | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Forward Voltage Vf | 4.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 221W | |
| Typical Gate Charge Qg @ Vgs | 58nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 9.23mm | |
| Width | 10.28mm | |
| Height | 4.5mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 41A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-263-7L | ||
Series MaxSiC | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 79mΩ | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 22V | ||
Forward Voltage Vf 4.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 221W | ||
Typical Gate Charge Qg @ Vgs 58nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 9.23mm | ||
Width 10.28mm | ||
Height 4.5mm | ||
Automotive Standard No | ||
- Land van herkomst:
- TW
The Vishay High performance N-Channel SiC MOSFET is designed for efficient power management in demanding applications. It excels in its Ability to handle high voltages and ensure reliable operation.
Fast switching speed enhances overall system performance
Short circuit withstand time of 3 μs ensures reliability during faults
Operating voltage range for gate-source control optimises flexibility
Continuous drain current capability supports robust energy transfer
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