Vishay TrenchFET N channel-Channel Automotive MOSFET, 49 A, 80 V MOSFET, 4-Pin PowerPAK SO-8L SQJ183ELP-T1_GE3
- RS-stocknr.:
- 790-424
- Fabrikantnummer:
- SQJ183ELP-T1_GE3
- Fabrikant:
- Vishay
Afbeelding representeert productcategorie
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 rol van 10 eenheden)*
€ 16,44
(excl. BTW)
€ 19,89
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 13 april 2027
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Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 10 - 90 | € 1,644 | € 16,44 |
| 100 - 490 | € 1,02 | € 10,20 |
| 500 - 990 | € 0,79 | € 7,90 |
| 1000 + | € 0,534 | € 5,34 |
*prijsindicatie
- RS-stocknr.:
- 790-424
- Fabrikantnummer:
- SQJ183ELP-T1_GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | Automotive MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 49A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | TrenchFET | |
| Package Type | PowerPAK SO-8L | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.0295Ω | |
| Channel Mode | MOSFET | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 147W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type Automotive MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 49A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series TrenchFET | ||
Package Type PowerPAK SO-8L | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.0295Ω | ||
Channel Mode MOSFET | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 147W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
The Vishay Automotive N-Channel MOSFET delivers superior performance as a power switching device. It is designed for high-efficiency applications, offering excellent thermal performance and drive capabilities.
TrenchFET technology ensures lower on-state resistance
AEC Q101 qualified for automotive reliability
Comprehensive thermal resistance ratings enhance heat dissipation
Single Pulse avalanche current rating maximises durability
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