Vishay TrenchFET Dual N-Channel Automotive MOSFET, 21 A, 60 V MOSFET, 4-Pin PowerPAK SO-8L SQJ768ELP-T1_GE3
- RS-stocknr.:
- 790-425
- Fabrikantnummer:
- SQJ768ELP-T1_GE3
- Fabrikant:
- Vishay
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Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 rol van 10 eenheden)*
€ 18,60
(excl. BTW)
€ 22,50
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 13 april 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 10 - 40 | € 1,86 | € 18,60 |
| 50 + | € 1,824 | € 18,24 |
*prijsindicatie
- RS-stocknr.:
- 790-425
- Fabrikantnummer:
- SQJ768ELP-T1_GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Dual N-Channel | |
| Product Type | Automotive MOSFET | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK SO-8L | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.0305Ω | |
| Channel Mode | MOSFET | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 35W | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Dual N-Channel | ||
Product Type Automotive MOSFET | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK SO-8L | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.0305Ω | ||
Channel Mode MOSFET | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 35W | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
The Vishay Automotive dual N-channel power MOSFET offers robust performance across a wide temperature range, designed to efficiently manage switching and drive applications in automotive systems.
TrenchFET power MOSFET technology ensuring efficient operation
AEC Q101 qualified for reliability in automotive applications
100% R and UIS tested for guaranteed performance assurance
Low on-state resistance values contribute to improved efficiency
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