Vishay TrenchFET P-Channel Automotive MOSFET, 47 A, 30 V MOSFET, 8-Pin PowerPAK 1212-8SLW SQS135ELNW-T1_GE3
- RS-stocknr.:
- 790-427
- Fabrikantnummer:
- SQS135ELNW-T1_GE3
- Fabrikant:
- Vishay
Afbeelding representeert productcategorie
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 rol van 50 eenheden)*
€ 40,85
(excl. BTW)
€ 49,45
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 30 december 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 50 - 200 | € 0,817 | € 40,85 |
| 250 - 450 | € 0,732 | € 36,60 |
| 500 + | € 0,638 | € 31,90 |
*prijsindicatie
- RS-stocknr.:
- 790-427
- Fabrikantnummer:
- SQS135ELNW-T1_GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | P-Channel | |
| Product Type | Automotive MOSFET | |
| Maximum Continuous Drain Current Id | 47A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK 1212-8SLW | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0205Ω | |
| Channel Mode | MOSFET | |
| Maximum Power Dissipation Pd | 84W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type P-Channel | ||
Product Type Automotive MOSFET | ||
Maximum Continuous Drain Current Id 47A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK 1212-8SLW | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0205Ω | ||
Channel Mode MOSFET | ||
Maximum Power Dissipation Pd 84W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
The Vishay Power MOSFET offers robust performance and reliability in automotive applications, featuring a P-Channel design with a 30 V (D-S) rating and operating temperatures up to 175 °C, ensuring superior thermal management.
TrenchFET Gen IV technology enhances efficiency and reliability
AEC Q101 qualified for automotive applications
100% R and UIS tested for guaranteed performance
Wettable flank terminals improve PCB mounting reliability
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