Infineon OptiMOS 5 Type N-Channel Power Transistor, 120 A, 100 V Enhancement, 3-Pin TO-220 IPP023N10N5AKSA1
- RS-stocknr.:
- 110-7116
- Fabrikantnummer:
- IPP023N10N5AKSA1
- Fabrikant:
- Infineon
Subtotaal (1 verpakking van 4 eenheden)*
€ 19,672
(excl. BTW)
€ 23,804
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 25 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 4 + | € 4,918 | € 19,67 |
*prijsindicatie
- RS-stocknr.:
- 110-7116
- Fabrikantnummer:
- IPP023N10N5AKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | OptiMOS 5 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 375W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 168nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, Pb-Free, JEDEC (J-STD20 and JESD22) | |
| Width | 4.57 mm | |
| Height | 15.95mm | |
| Length | 10.36mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type Power Transistor | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series OptiMOS 5 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 375W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 168nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, Pb-Free, JEDEC (J-STD20 and JESD22) | ||
Width 4.57 mm | ||
Height 15.95mm | ||
Length 10.36mm | ||
Automotive Standard No | ||
N.v.t.
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Gerelateerde Links
- Infineon OptiMOS™ 5 N-Channel MOSFET 100 V, 3-Pin TO-220 IPP023N10N5AKSA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 120 V, 3-Pin TO-220 IPP041N12N3GXKSA1
- Infineon OptiMOS™ N-Channel MOSFET 80 V, 3-Pin TO-220 IPP023N08N5AKSA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 150 V, 3-Pin TO-220 IPP051N15N5AKSA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 60 V, 3-Pin TO-220 IPP032N06N3GXKSA1
- Infineon OptiMOS™ -T2 N-Channel MOSFET 80 V, 3-Pin TO-220 IPP120N08S403AKSA1
- Infineon OptiMOS™-T N-Channel MOSFET 120 V, 3-Pin TO-220 IPP70N12S311AKSA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 120 V, 3-Pin TO-220 IPP048N12N3GXKSA1