onsemi UltraFET N-Channel MOSFET, 20 A, 60 V, 3-Pin DPAK HUFA76429D3ST-F085
- RS-stocknr.:
- 124-1427
- Fabrikantnummer:
- HUFA76429D3ST-F085
- Fabrikant:
- onsemi
Subtotaal (1 rol van 2500 eenheden)*
€ 1.245,00
(excl. BTW)
€ 1.507,50
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2500 + | € 0,498 | € 1.245,00 |
*prijsindicatie
- RS-stocknr.:
- 124-1427
- Fabrikantnummer:
- HUFA76429D3ST-F085
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 20 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | DPAK (TO-252) | |
| Series | UltraFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 23 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 110 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Width | 6.22mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 38 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Length | 6.73mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 2.39mm | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 20 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type DPAK (TO-252) | ||
Series UltraFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 23 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 110 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Width 6.22mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 38 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Length 6.73mm | ||
Minimum Operating Temperature -55 °C | ||
Height 2.39mm | ||
- Land van herkomst:
- US
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