onsemi UltraFET Type N-Channel MOSFET, 33 A, 60 V Enhancement, 3-Pin TO-220

Bekijk alle MOSFETs

Subtotaal (1 verpakking van 10 eenheden)*

€ 7,08

(excl. BTW)

€ 8,57

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Laatste voorraad RS
  • Laatste 570 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks
Per stuk
Per verpakking*
10 +€ 0,708€ 7,08

*prijsindicatie

RS-stocknr.:
807-8714
Fabrikantnummer:
HUF76423P3
Fabrikant:
onsemi
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

33A

Maximum Drain Source Voltage Vds

60V

Series

UltraFET

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

38mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

16 V

Typical Gate Charge Qg @ Vgs

28nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

85W

Forward Voltage Vf

1.25V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

4.7 mm

Height

16.3mm

Length

10.67mm

Automotive Standard

No

UltraFET® MOSFET, Fairchild Semiconductor


UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.

Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Gerelateerde Links