onsemi SuperFET II Type N-Channel MOSFET, 76 A, 600 V Enhancement, 3-Pin TO-247
- RS-stocknr.:
- 124-1458
- Fabrikantnummer:
- FCH041N60F
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 tube van 30 eenheden)*
€ 216,03
(excl. BTW)
€ 261,39
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tekort aan aanbod
- 180 stuk(s) klaar voor verzending vanaf een andere locatie
Onze huidige voorraad is beperkt en onze leveranciers verwachten tekorten.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 30 - 120 | € 7,201 | € 216,03 |
| 150 - 270 | € 6,25 | € 187,50 |
| 300 + | € 5,969 | € 179,07 |
*prijsindicatie
- RS-stocknr.:
- 124-1458
- Fabrikantnummer:
- FCH041N60F
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 76A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | SuperFET II | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 277nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 595W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 15.87mm | |
| Height | 20.82mm | |
| Standards/Approvals | No | |
| Width | 4.82mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 76A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series SuperFET II | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 277nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 595W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 15.87mm | ||
Height 20.82mm | ||
Standards/Approvals No | ||
Width 4.82mm | ||
Automotive Standard No | ||
SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor
Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, lighting applications, which require high power density, system efficiency and reliability.
Utilizing an Advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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