onsemi SUPERFET V Type N-Channel MOSFET, 57 A, 600 V Enhancement, 3-Pin TO-247

Subtotaal (1 tube van 450 eenheden)*

€ 2.075,40

(excl. BTW)

€ 2.511,45

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Tijdelijk niet op voorraad
  • Verzending vanaf 14 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks
Per stuk
Per tube*
450 +€ 4,612€ 2.075,40

*prijsindicatie

RS-stocknr.:
230-9086
Fabrikantnummer:
NTHL041N60S5H
Fabrikant:
onsemi
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

57A

Maximum Drain Source Voltage Vds

600V

Series

SUPERFET V

Package Type

TO-247

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

41mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

108nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

329W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Length

15.87mm

Height

41.07mm

Standards/Approvals

Pb-Free, RoHS

Width

4.82 mm

Automotive Standard

No

The ON Semiconductor series SUPERFET V MOSFET is the fifth generation high voltage super−junction (SJ) MOSFET family from ON Semiconductor. SUPERFET V delivers best−in−class FOMs (RDS(ON)·QG and RDS(ON)·EOSS) to improve not only heavy load but also light load efficiency. The 600 V SUPERET V series provides design benefits through reduced conduction and switching losses, while supporting extreme MOSFET dVDS/dt ratings at 120 V/ns. Consequently, the SUPERFET V MOSFET FAST series helps maximize system efficiency and power density.

100% Avalanche Tested

RoHS Compliant

Typ. RDS(on) = 32.8 mΩ

Internal Gate Resistance: 0.6 Ω

Ultra Low Gate Charge (Typ. Qg = 108 nC)

Gerelateerde Links