Infineon HEXFET Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin TO-220

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€ 131,25

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€ 158,80

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RS-stocknr.:
124-8963
Fabrikantnummer:
IRFB4110PBF
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

150nC

Maximum Power Dissipation Pd

370W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Height

9.02mm

Standards/Approvals

No

Width

4.82 mm

Length

10.66mm

Automotive Standard

No

Land van herkomst:
MX

Infineon HEXFET Series MOSFET, 180A Maximum Continuous Drain Current, 370W Maximum Power Dissipation - IRFB4110PBF


This MOSFET serves as an efficient power transistor tailored for applications in automation, electronics, and electrical industries. Its robust construction and precise specifications provide a versatile solution for applications where efficiency and reliability are essential. With an enhancement mode design and an N-channel configuration, it is suitable for high-speed switching operations.

Features & Benefits


• Maximum continuous drain current of 180A supports high performance

• Drain-to-source voltage range of 100V allows for a variety of applications

• Low RDS(on) of 4.5mΩ reduces power loss and enhances efficiency

• Power dissipation capability of up to 370W ensures stability

• Improved thermal characteristics foster reliability in extreme conditions

• Full characterisation on avalanche and dynamic dv/dt ruggedness promotes durability

Applications


• Employed in high-efficiency synchronous rectification for power supplies

• Suitable for uninterruptible power supply systems

• Ideal for high-speed power switching circuits

• Applicable in hard switched and high frequency circuits

What is the suitable operating temperature range for optimal performance?


It operates effectively within -55°C to +175°C, ensuring functionality across various environments.

How does the MOSFET minimise energy loss in circuits?


The low RDS(on) of 4.5mΩ significantly cuts conduction losses, allowing for efficient operation in power electronics.

Can it be used in high-frequency applications?


Yes, its design facilitates high-speed switching, making it appropriate for applications requiring Rapid on-off transitions.

What are the thermal resistance values for proper mounting?


The junction-to-case thermal resistance is 0.402°C/W, while the case-to-sink resistance is 0.50°C/W, enabling effective heat dissipation.

What avalanche characteristics should be considered during usage?


It supports single Pulse avalanche energy ratings, providing protection against transient voltage spikes and ensuring reliability in circuit design.

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