Infineon HEXFET N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin TO-220

RS-stocknr.:: 688-7216
Artikelnummer Distrelec:: 304-35-447
Fabrikantnummer:: IRLB4030PBF
Fabrikant:: Infineon

Infineon HEXFET N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin TO-220

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RS-stocknr.:: 688-7216
Artikelnummer Distrelec:: 304-35-447
Fabrikantnummer:: IRLB4030PBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	180A
	Maximum Drain Source Voltage Vds	100V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	4mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	87nC
	Maximum Power Dissipation Pd	370W
	Maximum Gate Source Voltage Vgs	16V
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Width	4.83mm
	Standards/Approvals	No
	Length	10.67mm
	Height	9.02mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 180A
	Maximum Drain Source Voltage Vds 100V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 4mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 87nC
	Maximum Power Dissipation Pd 370W
	Maximum Gate Source Voltage Vgs 16V
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Width 4.83mm
	Standards/Approvals No
	Length 10.67mm
	Height 9.02mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 100V Maximum Drain Source Voltage, 180A Maximum Continuous Drain Current - IRLB4030PBF

This n-channel enhancement MOSFET is a high-current power switch designed for through-hole mounting in TO-220 packages, intended for demanding power conversion and switching applications. It operates across a wide thermal range and supports gate-driven control for efficient conduction in DC circuits where low on-resistance and substantial continuous current capability are required.

Features and Benefits:

• Very low on-resistance 4mΩ for reduced conduction losses
• Handles continuous drain current of 180A for high-load applications
• Rated drain-source voltage 100V to accommodate medium-voltage systems
• Maximum power dissipation 370W for sustained thermal loading
• Typical gate charge 87nC enabling predictable switching behaviour
• Gate-source withstand up to 16V for robust drive margin

Applications

• Suitable for high-current motor drive stages
• Ideal for synchronous rectification in power supplies
• Used with battery management and DC-DC converters
• Can be used for industrial inverter switching
• Appropriate for telecoms power distribution racks

What thermal extremes can it tolerate during operation?

The device is specified to function between -55°C and 175°C, allowing use in both cold-start conditions and elevated-temperature environments encountered near heat sources.

How should it be mounted to manage heat effectively?

It is supplied in a TO-220 through-hole package permitting secure bolted attachment to heatsinks, enabling direct thermal conduction from the package tab for enhanced cooling.

What switching characteristics influence gate driver selection?

With a typical total gate charge of 87nC, driver circuits must supply sufficient peak current for desired transition times while managing switching losses.

What body and channel behaviour affects circuit topology choices?

As an N-channel enhancement device, it conducts when positively driven at the gate relative to source, making it suitable for low-side switching and synchronous topologies.