Infineon HEXFET Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin TO-220AB

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Subtotaal (1 tube van 50 eenheden)*

€ 145,20

(excl. BTW)

€ 175,70

(incl. BTW)

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Laatste voorraad RS
  • Laatste 150 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks
Per stuk
Per tube*
50 - 50€ 2,904€ 145,20
100 - 200€ 2,759€ 137,95
250 +€ 2,585€ 129,25

*prijsindicatie

RS-stocknr.:
145-9698
Fabrikantnummer:
IRFB4110GPBF
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

TO-220AB

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

4.5mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

370W

Typical Gate Charge Qg @ Vgs

150nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

16.51mm

Length

10.67mm

Standards/Approvals

No

Width

4.83 mm

Automotive Standard

No

N-Channel Power MOSFET 100V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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