Infineon HEXFET Type N-Channel MOSFET, 290 A, 100 V Enhancement, 3-Pin TO-247

RS-stocknr.:: 124-9019
Fabrikantnummer:: IRFP4468PBF
Fabrikant:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 290 A, 100 V Enhancement, 3-Pin TO-247

Bulkkorting beschikbaar

Subtotaal (1 tube van 25 eenheden)*

€ 91,575

(excl. BTW)

€ 110,80

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 75,00

Tijdelijk niet op voorraad

Verzending 1.750 stuk(s) vanaf 05 januari 2026

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per tube*
25 - 25	€ 3,663	€ 91,58
50 - 100	€ 3,48	€ 87,00
125 +	€ 3,334	€ 83,35

*prijsindicatie

RS-stocknr.:: 124-9019
Fabrikantnummer:: IRFP4468PBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	290A
	Maximum Drain Source Voltage Vds	100V
	Series	HEXFET
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	3mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	520W
	Typical Gate Charge Qg @ Vgs	360nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Length	15.87mm
	Standards/Approvals	No
	Height	20.7mm
	Width	5.31 mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 290A
	Maximum Drain Source Voltage Vds 100V
	Series HEXFET
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 3mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 520W
	Typical Gate Charge Qg @ Vgs 360nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Length 15.87mm
	Standards/Approvals No
	Height 20.7mm
	Width 5.31 mm
	Automotive Standard No

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