Infineon HEXFET Type N-Channel MOSFET, 50 A, 200 V Enhancement, 3-Pin TO-247

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Subtotaal (1 tube van 25 eenheden)*

€ 49,50

(excl. BTW)

€ 60,00

(incl. BTW)

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  • 750 stuk(s) klaar voor verzending vanaf een andere locatie
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Aantal stuks
Per stuk
Per tube*
25 - 25€ 1,98€ 49,50
50 - 100€ 1,683€ 42,08
125 - 225€ 1,584€ 39,60
250 - 600€ 1,466€ 36,65
625 +€ 1,406€ 35,15

*prijsindicatie

RS-stocknr.:
124-8763
Fabrikantnummer:
IRFP260MPBF
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-247

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

40mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

300W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

234nC

Maximum Operating Temperature

175°C

Length

16.13mm

Standards/Approvals

No

Height

21.1mm

Width

5.2 mm

Automotive Standard

No

Land van herkomst:
CN

N-Channel Power MOSFET 150V to 600V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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