Toshiba U-MOSVIII-H Type N-Channel MOSFET, 263 A, 60 V Enhancement, 3-Pin TO-220 TK100E06N1,S1X(S
- RS-stocknr.:
- 125-0528
- Fabrikantnummer:
- TK100E06N1,S1X(S
- Fabrikant:
- Toshiba
Tijdelijk niet op voorraad
- RS-stocknr.:
- 125-0528
- Fabrikantnummer:
- TK100E06N1,S1X(S
- Fabrikant:
- Toshiba
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 263A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-220 | |
| Series | U-MOSVIII-H | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.3mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 140nC | |
| Maximum Power Dissipation Pd | 255W | |
| Maximum Operating Temperature | 150°C | |
| Height | 15.1mm | |
| Length | 10.16mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 263A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-220 | ||
Series U-MOSVIII-H | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.3mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 140nC | ||
Maximum Power Dissipation Pd 255W | ||
Maximum Operating Temperature 150°C | ||
Height 15.1mm | ||
Length 10.16mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Land van herkomst:
- JP
MOSFET Transistors, Toshiba
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