Toshiba TK Type N-Channel MOSFET, 60 A, 120 V Enhancement, 3-Pin TO-220 TK32E12N1,S1X(S
- RS-stocknr.:
- 168-7971
- Fabrikantnummer:
- TK32E12N1,S1X(S
- Fabrikant:
- Toshiba
Bulkkorting beschikbaar
Subtotaal (1 tube van 50 eenheden)*
€ 41,65
(excl. BTW)
€ 50,40
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 25 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 - 200 | € 0,833 | € 41,65 |
| 250 - 950 | € 0,712 | € 35,60 |
| 1000 - 2450 | € 0,694 | € 34,70 |
| 2500 + | € 0,677 | € 33,85 |
*prijsindicatie
- RS-stocknr.:
- 168-7971
- Fabrikantnummer:
- TK32E12N1,S1X(S
- Fabrikant:
- Toshiba
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Series | TK | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 13.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Maximum Power Dissipation Pd | 98W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.45 mm | |
| Standards/Approvals | No | |
| Length | 10.16mm | |
| Height | 15.1mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 120V | ||
Series TK | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 13.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Maximum Power Dissipation Pd 98W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 4.45 mm | ||
Standards/Approvals No | ||
Length 10.16mm | ||
Height 15.1mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
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