Toshiba DTMOSIV N-Channel MOSFET, 5.8 A, 650 V, 3-Pin IPAK TK6Q65W,S1Q(S
- RS-stocknr.:
- 125-0590P
- Fabrikantnummer:
- TK6Q65W,S1Q(S
- Fabrikant:
- Toshiba
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RS heeft dit product niet meer op voorraad.
- RS-stocknr.:
- 125-0590P
- Fabrikantnummer:
- TK6Q65W,S1Q(S
- Fabrikant:
- Toshiba
Specificaties
Datasheets
Wetgeving en compliance
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Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 5.8 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | IPAK (TO-251) | |
| Series | DTMOSIV | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1.05 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 60 W | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Number of Elements per Chip | 1 | |
| Width | 2.3mm | |
| Length | 6.65mm | |
| Typical Gate Charge @ Vgs | 11 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Forward Diode Voltage | 1.7V | |
| Height | 7.12mm | |
| Alles selecteren | ||
|---|---|---|
Merk Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 5.8 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type IPAK (TO-251) | ||
Series DTMOSIV | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.05 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 60 W | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Number of Elements per Chip 1 | ||
Width 2.3mm | ||
Length 6.65mm | ||
Typical Gate Charge @ Vgs 11 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Forward Diode Voltage 1.7V | ||
Height 7.12mm | ||
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