Fabrikantnummer

Toshiba DTMOSIV Type N-Channel MOSFET, 5.8 A, 650 V Enhancement, 3-Pin TO-252 TK6P65W,RQ(S

RS-stocknr.:: 133-2800
Fabrikantnummer:: TK6P65W,RQ(S
Fabrikant:: Toshiba

Toshiba DTMOSIV Type N-Channel MOSFET, 5.8 A, 650 V Enhancement, 3-Pin TO-252 TK6P65W,RQ(S

Tijdelijk niet op voorraad

RS-stocknr.:: 133-2800
Fabrikantnummer:: TK6P65W,RQ(S
Fabrikant:: Toshiba

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Toshiba
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	5.8A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-252
	Series	DTMOSIV
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.05Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	±30 V
	Maximum Power Dissipation Pd	60W
	Forward Voltage Vf	1.7V
	Typical Gate Charge Qg @ Vgs	11nC
	Maximum Operating Temperature	150°C
	Width	6.1 mm
	Length	6.6mm
	Standards/Approvals	No
	Height	2.3mm
	Automotive Standard	No

	Alles selecteren
	Merk Toshiba
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 5.8A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-252
	Series DTMOSIV
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.05Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs ±30 V
	Maximum Power Dissipation Pd 60W
	Forward Voltage Vf 1.7V
	Typical Gate Charge Qg @ Vgs 11nC
	Maximum Operating Temperature 150°C
	Width 6.1 mm
	Length 6.6mm
	Standards/Approvals No
	Height 2.3mm
	Automotive Standard No

Land van herkomst:: JP

Toshiba DTMOSIV Type N-Channel MOSFET, 5.8 A, 650 V Enhancement, 3-Pin TO-252 TK6P65W,RQ(S

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